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Advanced High Voltage Power Device Concepts

Medium: Buch
ISBN: 978-1-4939-0132-6
Verlag: Springer
Erscheinungstermin: 08.12.2014
Lieferfrist: bis zu 10 Tage

The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.


Produkteigenschaften


  • Artikelnummer: 9781493901326
  • Medium: Buch
  • ISBN: 978-1-4939-0132-6
  • Verlag: Springer
  • Erscheinungstermin: 08.12.2014
  • Sprache(n): Englisch
  • Auflage: 2012
  • Produktform: Kartoniert, Previously published in hardcover
  • Gewicht: 873 g
  • Seiten: 568
  • Format (B x H x T): 155 x 235 x 32 mm
  • Ausgabetyp: Kein, Unbekannt
Autoren/Hrsg.

Autoren

1 Introduction.- 2 Silicon Thyristors.- 3 Silicon Carbide Thyristors.- 4 Silicon GTO.- 5 Silicon IGBT.- 6 SiC Planar MOSFET Structures.- 7 Silicon Carbide IGBT.- 8 Silicon MCT.- 9 Silicon BRT.- 10 Silicon EST.- 11 Synopsis.