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This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
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Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
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Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;
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Enables design of smaller, cheaper and more efficient power supplies.
Produkteigenschaften
- Artikelnummer: 9783319779935
- Medium: Buch
- ISBN: 978-3-319-77993-5
- Verlag: Springer
- Erscheinungstermin: 24.05.2018
- Sprache(n): Englisch
- Auflage: 1. Auflage 2018
- Serie: Integrated Circuits and Systems
- Produktform: Gebunden, HC runder Rücken kaschiert
- Gewicht: 541 g
- Seiten: 232
- Format (B x H x T): 160 x 241 x 20 mm
- Ausgabetyp: Kein, Unbekannt
Themen
- Technische Wissenschaften
- Elektronik | Nachrichtentechnik
- Elektronik
- Halb- und Supraleitertechnologie
- Technische Wissenschaften
- Maschinenbau | Werkstoffkunde
- Technische Mechanik | Werkstoffkunde
- Materialwissenschaft: Elektronik, Optik