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Grundmann

Nano-Optoelectronics

Concepts, Physics and Devices

Medium: Buch
ISBN: 978-3-540-43394-1
Verlag: Springer
Erscheinungstermin: 03.07.2002
Lieferfrist: bis zu 10 Tage

Traces the quest to use nanostructured media for novel and improved optoelectronic devices. Leading experts - among them Nobel laureate Zhores Alferov - write here about the fundamental concepts behind nano-optoelectronics, the material basis, physical phenomena, device physics and systems.


Produkteigenschaften


  • Artikelnummer: 9783540433941
  • Medium: Buch
  • ISBN: 978-3-540-43394-1
  • Verlag: Springer
  • Erscheinungstermin: 03.07.2002
  • Sprache(n): Englisch
  • Auflage: 1. Auflage 2002
  • Serie: NanoScience and Technology
  • Produktform: Gebunden, HC runder Rücken kaschiert
  • Gewicht: 942 g
  • Seiten: 442
  • Format (B x H x T): 160 x 241 x 33 mm
  • Ausgabetyp: Kein, Unbekannt
Autoren/Hrsg.

Herausgeber

I Concepts.- 1 The History of Heterostructure Lasers.- 2 Stress-Engineered Quantum Dots: Nature's Way.- II Physics.- 3 Characterization of Structure and Composition of Quantum Dots by Transmission Electron Microscopy.- 4 Scanning Tunneling Microscopy Characterization of InAs Nanostructures Formed on GaAs(001).- 5 Cross-sectional Scanning Tunneling Microscopy at InAs Quantum Dots.- 6 X-ray Characterization of Group III-Nitrides (Al,In,Ga)N.- 7 Theory of the Electronic and Optical Properties of InGaAs/GaAs Quantum Dots.- 8 Magneto-Tunneling Spectroscopy of Self-Assembled InAs Dots.- 9 Modulation Spectroscopy and Surface Photovoltage Spectroscopy of Semiconductor Quantum Wires and Quantum Dots.- 10 Optical Properties of Self-Organized Quantum Dots.- 11 High Occupancy Effects and Condensation Phenomena in Semiconductor Microcavities and Bulk Semiconductors.- III Devices.- 12 Theory of Quantum Dot Lasers.- 13 Long-Wavelength InGaAs/GaAs Quantum Dot Lasers.- 14 InP/GalnP Quantum Dot Lasers.- 15 High Power Quantum Dot Lasers.- 16 Inter-Sublevel Transitions in Quantum Dots and Device Applications.- 17 Progress in Growth and Physics of Nitride-Based Quantum Dots.- 18 Ultrafast Optical Properties of Quantum Dot Amplifiers.