Kostenloser Versand
Bequem zahlen
Wir sind gerne für Sie da
This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal–semiconductor or contacts and the valence-band discontinuities of semiconductor–semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors.
Produkteigenschaften
- Artikelnummer: 9783031590634
- Medium: Buch
- ISBN: 978-3-031-59063-4
- Verlag: Springer Nature Switzerland
- Erscheinungstermin: 15.06.2024
- Sprache(n): Englisch
- Auflage: 2024
- Serie: Synthesis Lectures on Engineering, Science, and Technology
- Produktform: Gebunden
- Gewicht: 488 g
- Seiten: 150
- Format (B x H x T): 173 x 246 x 14 mm
- Ausgabetyp: Kein, Unbekannt
Themen
- Technische Wissenschaften
- Maschinenbau | Werkstoffkunde
- Technische Mechanik | Werkstoffkunde
- Werkstoffprüfung
- Technische Wissenschaften
- Maschinenbau | Werkstoffkunde
- Technische Mechanik | Werkstoffkunde
- Werkstoffprüfung
- Technische Wissenschaften
- Elektronik | Nachrichtentechnik
- Elektronik
- Elektronische Baugruppen, Elektronische Materialien