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fachmedien.de - spezialisierte Fachinformationen für Studium und Beruf
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Zschech / Whelan / Mikolajick

Materials for Information Technology

Devices, Interconnects and Packaging

Medium: Buch
ISBN: 978-1-84996-967-3
Verlag: Springer
Erscheinungstermin: 22.10.2010
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This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.

Produkteigenschaften

  • Artikelnummer: 9781849969673
  • Medium: Buch
  • ISBN: 978-1-84996-967-3
  • Verlag: Springer
  • Erscheinungstermin: 22.10.2010
  • Sprache(n): Englisch
  • Auflage: 1. Auflage. Softcover version of original hardcover Auflage 2005
  • Serie: Engineering Materials and Processes
  • Produktform: Kartoniert, Paperback
  • Gewicht: 797 g
  • Seiten: 508
  • Format (B x H x T): 155 x 235 x 29 mm
  • Ausgabetyp: Kein, Unbekannt

Themen

Autoren/Hrsg.

Herausgeber

Recent Advances in Thin-film Deposition.- Molecular-beam Deposition of High-k Gate Dielectrics for Advanced CMOS.- LEPECVD — A Production Technique for SiGe MOSFETs and MODFETs.- Thin-film Engineering by Atomic-layer Deposition for Ultra-scaled and Novel Devices.- Atomic-layer Deposited Barrier and Seed Layers for Interconnects.- Copper CVD for Conformal Ultrathin-film Deposition.- Pushing PVD to the Limits — Recent Advances.- Surface Engineering Using Self-assembled Monolayers: Model Substrates for Atomic-layer Deposition.- Selective Airgaps: Towards a Scalable Low-k Solution.- Silicides — Recent Advances and Prospects.- TEM Characterization of Strained Silicon.- Material Aspects of Non-Volatile Memories.- An Introduction to Nonvolatile Memory Technology.- Floating-dot Memory Transistors on SOI Substrate.- Ion-beam Synthesis of Nanocrystals for Multidot Memory Structures.- Scaling of Ferroelectric-based Memory Concepts.- Device Concepts with Magnetic Tunnel Junctions.- Phase-change Memories.- Amorphous-to-fcc Transition in GeSbTe Alloys.- Organic Nonvolatile Memories.- Materials for Interconnects.- Interconnect Technology — Today, Recent Advances and a Look into the Future.- Dielectric and Scaling Effects on Electromigration for Cu Interconnects.- Texture and Stress Study of Sub-Micron Copper Interconnect Lines Using X-ray Microdiffraction.- Stress Modeling for Copper Interconnect Structures.- Conductivity Enhancement in Metallization Structures of Regular Grains.- Advanced Barriers for Copper Interconnects.- Synthesis and Characterization of Compounds Obtained by Crosslinking of Polymethylhydrosiloxane by Aromatic Rings.- Revealing the Porous Structure of Low-k Materials Through Solvent Diffusion.- Carbon Nanotube Via Technologies for Future LSIInterconnects.- Nickel Nanowires Obtained by Template Synthesis.- Materials for Assembly/Packaging.- The Importance of Polymers in Wafer-Level Packaging.- Electrically Conductive Adhesives as Solder Alternative: A Feasible Challenge.- The Role of Au/Sn Solder in Packaging.- Packaging Materials: Organic-Inorganic Hybrids for Millimetre-Wave Optoelectronics.- Wafer-Level Three-Dimensional Hyper-Integration Technology Using Dielectric Adhesive Wafer Bonding.- Advanced Materials Characterization.- Challenges to Advanced Materials Characterization for ULSI Applications.- Advanced Material Characterization by TOFSIMS in Microelectronic.- Electronic Properties of the Interface Formed by Pr2O3 Growth on Si(001), Si(111) and SiC(0001) Surfaces.- Materials Characterization by Ellipsometry.- Thermal Desorption Spectrometry as a Method of Analysis for Advanced Interconnect Materials.- Electron Backscatter Diffraction: Application to Cu Interconnects in Top-View and Cross Section.- X-ray Reflectivity Characterisation of Thin-Film and Multilayer Structures.