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This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.
Produkteigenschaften
- Artikelnummer: 9781402045554
- Medium: Buch
- ISBN: 978-1-4020-4555-4
- Verlag: Springer
- Erscheinungstermin: 22.03.2006
- Sprache(n): Englisch
- Auflage: 2006. Auflage 2006
- Produktform: Gebunden
- Gewicht: 1340 g
- Seiten: 294
- Format (B x H x T): 169 x 249 x 23 mm
- Ausgabetyp: Kein, Unbekannt