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Transistor Level Modeling for Analog/RF IC Design

Medium: Buch
ISBN: 978-1-4020-4555-4
Verlag: Springer
Erscheinungstermin: 22.03.2006
Lieferfrist: bis zu 10 Tage

This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.


Produkteigenschaften


  • Artikelnummer: 9781402045554
  • Medium: Buch
  • ISBN: 978-1-4020-4555-4
  • Verlag: Springer
  • Erscheinungstermin: 22.03.2006
  • Sprache(n): Englisch
  • Auflage: 2006. Auflage 2006
  • Produktform: Gebunden
  • Gewicht: 1340 g
  • Seiten: 294
  • Format (B x H x T): 169 x 249 x 23 mm
  • Ausgabetyp: Kein, Unbekannt
Autoren/Hrsg.

Herausgeber

2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures.- PSP: An advanced surface-potential-based MOSFET model.- EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model.- Modelling using high-frequency measurements.- Empirical FET models.- Modeling the SOI MOSFET nonlinearities. An empirical approach.- Circuit level RF modeling and design.- On incorporating parasitic quantum effects in classical circuit simulations.- Compact modeling of the MOSFET in VHDL-AMS.- Compact modeling in Verilog-A.