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This comprehensive volume presents a wealth of practical knowledge in the field of MOS transistor modeling. Coverage includes the 2/3D process and device simulations with a focus on high-voltage MOSFET devices, the development of both PSP and EKV models, and comparisons of physics-based MOSFET models with measurement-based models. The variety of subjects and the high quality content of this volume make it a preferred reference for researchers and users of MOSFET devices and models. The book is recommended for everyone involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.
Produkteigenschaften
- Artikelnummer: 9789048171484
- Medium: Buch
- ISBN: 978-90-481-7148-4
- Verlag: Springer Netherlands
- Erscheinungstermin: 19.10.2010
- Sprache(n): Englisch
- Auflage: Softcover Nachdruck of hardcover 1. Auflage 2006
- Produktform: Kartoniert, Previously published in hardcover
- Gewicht: 535 g
- Seiten: 294
- Format (B x H x T): 170 x 244 x 17 mm
- Ausgabetyp: Kein, Unbekannt